| PART |
Description |
Maker |
| QL78F6S-A QL78F6S-B QL78F6S-C QL78F6S-ABC |
AlGaAs Laser Diode
sensor
|
Roithner LaserTechnik GmbH
Roithner LaserTechnik G...
|
| SLD237VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY
|
| SLD233VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD235VL |
Index-Guided High Power AlGaAs Laser Diode
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD238VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RLD78NZH1 |
AlGaAs laser diodes
|
ROHM[Rohm]
|
| RLD-78NP10-B |
AlGaAs Laser Diodes(铝砷化镓激光二极管)
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
